Fundamental Mechanisms of Copper CMP – Passivation Kinetics of Copper in CMP Slurry Constituents
نویسندگان
چکیده
منابع مشابه
Copper CMP and Process Control
A production worthy, copper CMP technology has been successfully developed on a multi-platen CMP system. The System consists of three polish platens, each of which is equipped with an optical endpoint detection system. The process consists of three steps with different polish slurries, and is designed to polish copper with a tantalum based barrier, and to achieve good defect performance. Patter...
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Results from experiments on the removal of copper using chemical mechanical polishing ~CMP! by alumina abrasives suspended in deionized water are reported. The experiments were carried out in a benchtop polishing tool using IC1000 perforated pads and SUBA 500 pads. The removal rate was measured over a good range of values of the relative velocity and pressure, and for different values of the ab...
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Synchronization is an important aspect of multi-processor programs. Though necessary to communicate data or control information across different threads of a parallel program, excessive synchronization can serialize execution to the point where little benefit is seen from creating a parallel program.1 Synchronization in the operating systems can also have a large impact on performance when coor...
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1 ISSN:0747-8291. COPYRIGHT (C) Media Analytics Ltd. Reproduction in whole, or in part, including by electronic means, without permission of publisher is prohibited. Those registered with the Copyright Clearance Center (www.copyright.com) may photocopy this article for a flat fee per copy. MICROELECTRONICS AN APPROACH FOR COPPER AND HYDROGEN PEROXIDE REMOVAL FROM COPPER CMP AND SOLAR CELL WASTE...
متن کاملIn Situ Investigation of Slurry Flow Fields during CMP
The objective of this work is to obtain in situ slurry fluid flow data during the chemical mechanical planarization CMP process. Slurry flow affects the material removal processes, the creation of defects, and consumable use during CMP, and therefore impacts the cost and quality of polishing. Wafer-scale flow visualization using seeded slurry was accomplished for a variable applied load 0.3–2.5...
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ژورنال
عنوان ژورنال: MRS Proceedings
سال: 2009
ISSN: 0272-9172,1946-4274
DOI: 10.1557/proc-1157-e06-02